Jan Sendler

ESR 1.1 Jan Sendler. PhD student at the University of Luxembourg

Obtained a Physics diploma from the University of Mainz in 2012. In this work he analyzed data that was taken with the ATLAS-detector at the Large Hadron Collider at CERN in Switzerland. The topic of his Master Thesis was the determination of the differential production cross section of Z-Bosons with respect to their rapidity.

Within the Kestcells-project his tasks are the preparation of reference materials by physical vapor deposition and optical characterization of thin films using Raman and Photoluminescence spectroscopy. So far, he has been able to use intensity dependent Photoluminescence measurements to establish the existence of several different phases in absorber layers produced by the University of Uppsala.


1. A. Redinger, Djemour, T. P. Weiss, J. Sendler and S. Siebentritt, Molecular beam epitaxy of Cu2ZnSnSe4 thin films grown on GaAs(001), Proceeding of the Photovoltaic Specialists Conference (PVSC), 2013 IEEE 39th, 16-21 June 2013, Tampa, FL, USA, pp.0420 – 0425, 2013. DOI: 10.1109/PVSC.2013.6744181.

2. G. Rey, A. Redinger, J. Sendler, T. P. Weiss, M. Thevenin, M. Guennou, B. El Adib, and S. Siebentritt. The band gap of Cu2ZnSnSe4: effect of order-disorder, Applied Physics Letters, 2014. DOI:10.1063/1.4896315.

3. A.Redinger, H. Groiss, J. Sendler, et al, “Epitaxial Cu2ZnSnSe4 thin films and devices” Thin Solid Films, Vol 582 (2015) 193-197. DOI:10.1016/j.tsf.2014.11.040

4. H. Meadows, D. Regesch, M. Thevenin, J. Sendler et al, “CuInSe2 semiconductor formation by laser annealing” Thin Solid Films Vol 582 (2015) 23-26. doi:10.1016/j.tsf.2014.10.042

5. A. Redinger, J. Sendler, R. Djemour, et al. “Different Bandgaps in Cu2ZnSnSe4 : a high temperature coevaporation study” IEEE Journal of Photovoltaics Vol 5(2) (2014) 641-648. 10.1109/JPHOTOV.2014.2377561

6. J.Malaquias, D. Berg, J. Sendler, et al “Controlled bandgap CuIn1 – xGax(S0.1Se0.9)2 (0.10 = x = 0.72) solar cells from electrodeposited precursors” Thin Solid Films Vol 582 (2015) 2-6. DOI: 10.1016/j.tsf.2014.10.068

7. M.Mousel, T.Schwarz, R. Djemour, T. P Weiss, J. Sendler et al. Cu-rich precursors improve kesterite solar cells Advanced Energy Materials (2013), Vol 4 (2) DOI:10.1002/aenm.201300543

8. G. Rey,T.P. Weiss, J. SENDLER, A. Finger, C. Spindler, F. Werner, M. Melchiorre, M. Hála, M. Guennou, S. Siebentritt Ordering kesterite improves solar cells: A low temperature post-deposition annealing study. Solar Energy Materials and Solar Cells. Volume 151, July 2016, Pages 131–138 DOI:10.1016/j.solmat.2016.02.014.

9. S. Siebentritt, G. Rey, A. Finger, D. Regesch, J. Sendler, T.P. Weiss, T. Bertram, “What is the bandgap of kesterite?” Solar En. Mater. Solar Cells, 2016. DOI:10.1016/j.solmat.2015.10.017

10. J. J. S. Scragg, J. K. Larsen, M. Kumar, C. Persson, J. Sendler, S. Siebentritt, C. Platzer Björkman. “Cu–Zn disorder and band gap fluctuations in Cu2ZnSn(S,Se)4: Theoretical and experimental investigations”, Physica Status Solidi (b) Volume 253, Issue 2, pages 247–254, February 2016. DOI: 10.1002/pssb.201552530

11. J. Sendler, M. Thevenin, F. Werner, A. Redinger, S. Li, Ca. Hägglund, Ch. Platzer-Björkman and S. Siebentritt.”Photoluminescence studies in epitaxial CZTSe thin films”. J. Appl. Phys. 120, 125701 (2016). DOI: 10.1063/1.4962630


1. A. Redinger, J. Sendler, R. Djemour, H. Groiss, D. Gerthsen, S. Siebentritt.Epitaxial Cu2ZnSnSe4In: E-MRS, Lille, France, 2014(Poster)

2. Garcia-Llamas, J.M. Merino, R. Caballero, J.M. Cano-Torres, D. Regesch, J. Sendler, S. Siebentritt, M. León. title In: 4th European Kesterite Workshop. Berlin, Germany, 2014. (Poster).

3. J. Sendler, A. Redinger, R. Djemour, S. Siebentritt, Optical characterization of epitaxial CZTSe absorbers with varying Cu-content,  In 4th European Kesterite Workshop. Berlin, Germany, 2013 (Poster).

4. J. Sendler, G. Rey, S. Siebentritt, Photoluminescence in epitaxial CZTSe with strong tailing, In 5th European Kesterite Workshop. Tallinn, Estonia, 2014 (Oral).

5. C. Spindler, J. Sendler and S. Siebentritt, Excitation dependence of photoluminescence transitions, Gordon Conference on Defects in Semiconductors. New London, USA, 2016 (Poster).