Program of secondments

The strong interdisciplinary and cooperative character of the IRPs defined in KESTCELLS will require the development of an intense program of secondments. In this sense, all ESRs and ERs will be offered the possibility to perform 3 (ESRs) / 2 (ERs) visits, with a duration of 1/3 months, in centres with complementary skills and facilities. The proposed program of secondments includes two stays to be performed in complementary research groups, and a third stay to be performed at an industrial site. The proposed stays at the networ0k research groups for the different ESRs/ERs are:

 

ESR1.1 (host: UL, Synthesis and electrical characterisation of kesterite reference thin films and test devices):

o Stay at UAM (M17, 1 month): Spectroscopic ellipsometry analysis of reference kesterite thin films (to broaden the background in optical and optoelectronic methods)

o Stay at UU-ASC (M29, 2 months): X-Ray Photoelectron Spectroscopy and surface analysis of reference kesterites (to acquire experimental background in surface analysis techniques)

 

ESR1.2 (host: UAM, Optical characterisation, band gap analysis and electrical characterisation of kesterites):

o Stay at UL (M13, 3 months): Growth of reference kesterite thin films with different composition for optical analysis by spectroscopic ellipsometry

o Stay at FUB (M19, 3 months): Correlation with crystalline characterisation by X-rays and neutron diffraction techniques

 

ESR1.3 (host: IREC, Vibrational analysis of kesterites):

o Stay at FUB (M12, 3 months): Synthesis of reference kesterites with different composition for vibrational analysis. Correlation with structural characterisation by X-ray and neutron diffraction analysis

o Stay at UAM (M24, 2 months): Transport properties of kesterite reference thin films and polycrystalline bulk samples

 

ESR1.4 (host: FUB, Synthesis and structural analysis of kesterite reference materials):

o Stay at UL (M16, 3 months): Growth of reference kesterite thin films with different composition for compositional and structural analysis

o Stay at UAM (M26, 3 months): Optical characterisation and band gap analysis of of reference kesterites with different composition

 

ESR2.1 (host: NU, PVD growth of CZTSe based absorbers):

o Stay at EMPA (M15, 3 months): Characterisation and analysis of back contacts to 2-stage sputtered CZTSe absorber layers

o Stay at HZB (M23, 3 months): Comparison of sputtered 2-stage CZTSe with evaporated CZTS heterojunctions

 

ESR2.2 (host: UU-ASC, Reactive sputtering growth of CZTS based absorbers):

o  Stay at NU (M18, 1 month): Exchange of experiences in CZTS and CZTSe PVD deposition techniques

o Stay at HZB (M32, 2 months): Electron microscopy based techniques for structural and chemicophysical characterisation of kesterite layers synthesised by reactive sputtering processes

 

ESR2.3: (host: IREC, chemical synthesis of absorbers):

o Stay at EMPA (M19, 3 months): Implementation of cells using absorbers developed with chemical routes

o Stay at NU (M32, 3 months): Electrooptical characterisation of cell prototypes with absorbers synthesised by chemical based routes: correlation with data from PVD based absorbers

 

ESR3.1 (host: HZB/E-I2, Optimal CZTS heterojunctions):

o Stay at UU-ASC (M15, 3 months): Photoelectron spectroscopy analysis of CZTS based heterojunctions

o Stay at AMU (M20, 2 months): Modelling and simulation of cells: optimal design of heterojunction solar cell.

 

ESR3.2 (host: EMPA, Alternative window and buffer layers, back contacts and extension to flexible substrates):

o Stay at UU-ASC (M15, 3 months): Correlation with alternative CZTS heterostructures based on ALD (Atomic Layer Deposition) growth of wide bandgap buffer layers

o Stay at NU (M22, 3 months): Development of CZTSe based heterojunctions

 

ESR4.1 (host: NEXCIS, Quality control and process monitoring):

o Stay at AMU (M15, 2 months): Correlation between the electricaland optoelectronic characterisation of layers in the device heterostructure and the cell parameters.

o Stay at HZB (M32, 2 months): Electron microscopy based techniques for characterisation of heterojunctions. Correlation with optoelectronic cell parameters.

 

ESR4.2 (host: HZB/E-I3, In-situ process monitoring by optical non destructive techniques):

o Stay at IREC (M16, 3 months): Spectral calibration of in-situ Raman scattering tools

o Stay at UU-ASC (M24, 3 months): Complementary ex-situ analysis of absorbers at different process steps: identification of growth mechanisms

 

ESR5.1 (host: AMU, Cell modelling and design):

o Stay at HZB (M14, 3 months): Analysis of interfaces and heterostructures. Determination of junction parameters for cell modelling

o Stay at NEXCIS (M32, 3 months): Test analysis of devices for comparison with modelling results

 

ER6.1 (host: ASNT: Industrial scale up of PVD processes):

o Stay at IREC (M26, 3 months): Analysis of industrial implementation of techniques for assessment of absorber homogeneity

o Stay at AMU (M30, 3 months): Application of optical & optoelectronic based characterisation techniques for industrial process monitoring in thin film PV technologies

 

ER6.2 (host: NEXCIS: Waste management in industrial processes):

o Stay at IREC (M28, 2 months): Raman scattering based tools for kesterite growth monitoring

o Stay at EMPA (M30, 1 month): Scale-up of chemical routes for buffer layer deposition: optimization of the junction for large area modules

 

Industrial Projects at NEXCIS:

o Waste management in industrial PV processes: requirements for environmental friendly processes (ESR2.1, ESR2.3, ESR3.1)

o Quality control and Process Monitoring: application to industrial processes (ESR1.1, ESR1.4)

 

Industrial Projects at ASNT:

o Cell and module stability: Analysis of degradation and failure mechanisms. Comparison of main industrial PV technologies and requirements for new technologies (ESR1.2, ESR1.3, ESR2.2)

o Quality control at module level. Specifications and requirements for implementation at Solar Plants (ESR3.2, ES4.2, ESR5.1)